Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O

Type:
Journal
Info:
Microelectronic Engineering 80 (2005) 158 - 161
Date:
2005-06-04
DOI:
https://doi.org/10.1016/j.mee.2005.04.060

Author Information

Name Institution
Sang Woon LeeSeoul National University
Oh Seong KwonSeoul National University
Cheol Seong HwangSeoul National University

Films

Plasma SrO

Hardware used: Custom
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Plasma TiO2

Hardware used: Custom
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Plasma SrTiO3

Hardware used: Custom
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
Where to buy precursor
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Substrates

SiO2
Ru

Notes

1243