Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure

Type:
Journal
Info:
Phys. Status Solidi A, 1-8 (2014)
Date:
2014-06-17

Author Information

Name Institution
Wensheng LiangThe Australian National University
Dongchul SuhSeoul National University
Jun YuThe Australian National University
James BullockThe Australian National University
Klaus J. WeberThe Australian National University

Films

Plasma Al2O3

Hardware used: Beneq TFS-200


Film/Plasma Properties

Characteristic: Images
Analysis: Optical Microscopy

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Resistivity, Sheet Resistance
Analysis: I-V, Current-Voltage Measurements

Characteristic: Minority Carrier Lifetime
Analysis: -

Characteristic: Film Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Unknown
Analysis: Humidity Test

Characteristic: Unknown
Analysis: Climatic Testing

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Notes

RCA clean + HF dip.
Passivation activated by annealing 95% Ar:5% H2 @ 400C for 30min.
No blistering.
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