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Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure

Type:
Journal
Info:
Phys. Status Solidi A, 1-8 (2014)
Date:
2014-06-17
DOI:
http://dx.doi.org/10.1002/pssa.201431256

Author Information

Name Institution
Wensheng LiangThe Australian National University
Dongchul SuhSeoul National University
Jun YuThe Australian National University
James BullockThe Australian National University
Klaus J. WeberThe Australian National University

Films

Plasma Al2O3

Hardware used: Beneq TFS-200
Deposition Temperature = 175C

Film/Plasma Properties

Characteristic: Images
Analysis: Optical Microscopy
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2425 Source Meter

Characteristic: Minority Carrier Lifetime
Analysis: -
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Film Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 80V

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Unknown
Analysis: Humidity Test
Diagnostic: Thermoline Asset 340

Characteristic: Unknown
Analysis: Climatic Testing
Diagnostic: WVC C340

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Substrates

Si(100)

Notes

RCA clean + HF dip.
Passivation activated by annealing 95% Ar:5% H2 @ 400C for 30min.
No blistering.
172