Graphene-based MMIC process development and RF passives design

Type:
Conference Proceedings
Info:
GeMiC 2015 - March 16-18, 2015, Nürnberg, Germany
Date:
2015-03-16
DOI:
http://dx.doi.org/10.1109/GEMIC.2015.7107813

Author Information

Name Institution
Abdelrahman AskarRWTH Aachen University
Ahmed HamedRWTH Aachen University
Mohamed SaeedRWTH Aachen University
Abhay A. SagadeApplied Micro and Optoelectronic (AMO) GmbH
Daniel NeumaierApplied Micro and Optoelectronic (AMO) GmbH
Renato NegraRWTH Aachen University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Substrates

SiO2
Ti/Al

Notes

PEALD Al2O3 film for graphene-based MMIC process.
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