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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Junction-less nanowire based photodetector: Role of nanowire width
Type:
Journal
Info:
Arxiv.org Preprint
Date:
2017-07-25
Author Information
| Name | Institution |
|---|---|
| Anita Fadavi Roudsari | University of Waterloo |
| Iman Khodadadzadeh | University of Waterloo |
| Simarjeet S Saini | University of Waterloo |
| MP Anantram | University of Washington |
| Nixon O | Teledyne DALSA Inc. |
Films
Film/Plasma Properties
Substrates
| Silicon |
Keywords
| Passivation |
Notes
| 1054 |