Publication Information

Title: Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells

Type: Journal

Info: J . KIEEME, V ol. 26, No. 10, pp. 754-759, October 2013

Date: 2013-09-24

DOI: http://dx.doi.org/10.4313/JKEM.2013.26.10.754

Author Information

Name

Institution

Chungnam National University

Korea Institute of Energy Research

Korea Institute of Energy Research

Chungnam National University

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

FTIR, Fourier Transform InfraRed spectroscopy

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Blistering

-

-

Lifetime

-

-

Substrates

Si(100)

Keywords

Notes

Written in Korean.

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