Publication Information

Title: Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells

Type: Journal

Info: J . KIEEME, V ol. 26, No. 10, pp. 754-759, October 2013

Date: 2013-09-24

DOI: http://dx.doi.org/10.4313/JKEM.2013.26.10.754

Author Information

Name

Institution

Chungnam National University

Korea Institute of Energy Research

Korea Institute of Energy Research

Chungnam National University

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Blistering

Unknown

Unknown

Lifetime

Unknown

Unknown

Substrates

Si(100)

Keywords

Notes

Written in Korean.

569



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