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Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells

Type:
Journal
Info:
J . KIEEME, V ol. 26, No. 10, pp. 754-759, October 2013
Date:
2013-09-24
DOI:
http://dx.doi.org/10.4313/JKEM.2013.26.10.754

Author Information

Name Institution
Se Young SongChungnam National University
Min Gu KangKorea Institute of Energy Research
Hee-eun SongKorea Institute of Energy Research
Hyo Sik ChangChungnam National University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Blistering
Analysis: -
Diagnostic: -

Characteristic: Lifetime
Analysis: -
Diagnostic: -

Substrates

Si(100)

Notes

Written in Korean.
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