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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
Type:
Journal
Info:
J . KIEEME, V ol. 26, No. 10, pp. 754-759, October 2013
Date:
2013-09-24
Author Information
| Name | Institution |
|---|---|
| Se Young Song | Chungnam National University |
| Min Gu Kang | Korea Institute of Energy Research |
| Hee-eun Song | Korea Institute of Energy Research |
| Hyo Sik Chang | Chungnam National University |
Films
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Blistering
Analysis: -
Characteristic: Lifetime
Analysis: -
Substrates
| Si(100) |
Keywords
Notes
| Written in Korean. |
| 569 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
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