Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells

Publication Information

Title: Improvement on the Passivation Effect of Al₂O₃ Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells

Type: Journal

Info: J . KIEEME, V ol. 26, No. 10, pp. 754-759, October 2013

Date: 2013-09-24

DOI: http://dx.doi.org/10.4313/JKEM.2013.26.10.754

Author Information

Name

Institution

Se Young Song

Chungnam National University

Min Gu Kang

Korea Institute of Energy Research

Hee-eun Song

Korea Institute of Energy Research

Hyo Sik Chang

Chungnam National University

Films

Plasma Al₂O₃ using Unknown

Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Blistering

Unknown

Lifetime

Unknown

Substrates

Si(100)

Keywords

Notes

Written in Korean.

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Publication Information

Author Information

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range = 150-350C

Film/Plasma Properties

Substrates

Keywords

Notes

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Plasma Al₂O₃ using Unknown