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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
Type:
Other
Info:
Practical Aspects of Computational Chemistry IV, p. 303-351, 2016.
Date:
2016-05-18
Author Information
| Name | Institution |
|---|---|
| Andrey A. Rybakov | Moscow State University |
| Alexander V. Larin | Moscow State University |
| Daniel P. Vercauteren | University of Namur |
| Georgy M. Zhidomirov | Moscow State University |
Films
Film/Plasma Properties
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Notes
| 789 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |