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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
Type:
Other
Info:
Practical Aspects of Computational Chemistry IV, p. 303-351, 2016.
Date:
2016-05-18
Author Information
| Name | Institution |
|---|---|
| Andrey A. Rybakov | Moscow State University |
| Alexander V. Larin | Moscow State University |
| Daniel P. Vercauteren | University of Namur |
| Georgy M. Zhidomirov | Moscow State University |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 789 |