Publication Information

Title: Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3

Type: Other

Info: Practical Aspects of Computational Chemistry IV, p. 303-351, 2016.

Date: 2016-05-18

DOI: http://dx.doi.org/10.1007/978-1-4899-7699-4_11

Author Information

Name

Institution

Moscow State University

Moscow State University

University of Namur

Moscow State University

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

789



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