Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3

Type:
Other
Info:
Practical Aspects of Computational Chemistry IV, p. 303-351, 2016.
Date:
2016-05-18
DOI:
http://dx.doi.org/10.1007/978-1-4899-7699-4_11

Author Information

Name Institution
Andrey A. RybakovMoscow State University
Alexander V. LarinMoscow State University
Daniel P. VercauterenUniversity of Namur
Georgy M. ZhidomirovMoscow State University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

789