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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
Type:
Other
Info:
Practical Aspects of Computational Chemistry IV, p. 303-351, 2016.
Date:
2016-05-18
Author Information
| Name | Institution |
|---|---|
| Andrey A. Rybakov | Moscow State University |
| Alexander V. Larin | Moscow State University |
| Daniel P. Vercauteren | University of Namur |
| Georgy M. Zhidomirov | Moscow State University |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 789 |