A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement

Type:
Journal
Info:
Sci. Adv. 2016;2:e1501101
Date:
2015-11-03
DOI:
http://dx.doi.org/10.1126/sciadv.1501101

Author Information

Name Institution
Jae-Min KimKorean Basic Science Institute
Donghee SonKorean Basic Science Institute
Mincheol LeeKorean Basic Science Institute
Changyeong SongKorean Basic Science Institute
Jun-Kyul SongKorean Basic Science Institute
Ja Hoon KooKorean Basic Science Institute
Dong Jun LeeKorean Basic Science Institute
Hyung Joon ShimKorean Basic Science Institute
Ji Hoon KimPusan National University
Minbaek LeeInha University
Taeghwan HyeonKorean Basic Science Institute
Dae-Hyeong KimKorean Basic Science Institute

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range = 150-250C

Film/Plasma Properties

Substrates

Silicon

Notes

444