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Atomic layer epitaxy of germanium
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Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
Type:
Journal
Info:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.5, OCTOBER, 2014
Date:
2014-07-30
Author Information
| Name | Institution |
|---|---|
| Do-Kywn Kim | Kyungpook National University |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 204 |