Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs

Publication Information

Title: Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

Type: Journal

Info: JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.5, OCTOBER, 2014

Date: 2014-07-30

DOI: http://dx.doi.org/10.5573/JSTS.2014.14.5.601

Name

Institution

Do-Kywn Kim

Kyungpook National University

Characteristic

Analysis

Diagnostic

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