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The publication database currently has 1567 entries.

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195 Films Compositions

265 Precursors and Plasma Gases

76 Deposition Hardwares

242 Film and Plasma Characteristics

84 Theses

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In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films Influence of oxygen source on the ferroelectric properties of ALD grown Hf_1-xZr_xO₂ films

Search 1567 plasma ALD publications by:

195 Films Compositions

265 Precursors and Plasma Gases

76 Deposition Hardwares

242 Film and Plasma Characteristics

Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

Type:

Journal

Info:

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.5, OCTOBER, 2014

Date:

2014-07-30

DOI:

http://dx.doi.org/10.5573/JSTS.2014.14.5.601

Author Information

Name	Institution
Do-Kywn Kim	Kyungpook National University

Films

Plasma Al₂O₃

Hardware used: Unknown

Deposition Temperature = 450C

Film/Plasma Properties

Substrates

Keywords

Notes

204