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The publication database currently has 1658 entries.

204 Films

274 Precursors

78 Dep Hardware Sets

253 Characteristics

91 Theses

5093 Authors

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Properties and Mechanism of PEALD-In₂O₃ Thin Films Prepared by Different Precursor Reaction Energy Uniformity of HfO₂ Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition Optimization of Y₂O₃ dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy Innovative remote plasma source for atomic layer deposition for GaN devices

Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

Type:

Journal

Info:

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.5, OCTOBER, 2014

Date:

2014-07-30

DOI:

http://dx.doi.org/10.5573/JSTS.2014.14.5.601

Author Information

Name	Institution
Do-Kywn Kim	Kyungpook National University

Films

Plasma Al₂O₃

Hardware used: Unknown

Deposition Temperature = 450C

Film/Plasma Properties

Substrates

Keywords

Notes

204