Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs

Type:
Journal
Info:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.5, OCTOBER, 2014
Date:
2014-07-30
DOI:
http://dx.doi.org/10.5573/JSTS.2014.14.5.601

Author Information

Name Institution
Do-Kywn KimKyungpook National University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature = 450C

Film/Plasma Properties

Substrates

Keywords

Notes

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