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Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
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Publication Information
Title:
Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
Type:
Journal
Info:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.14, NO.5, OCTOBER, 2014
Date:
2014-07-30
Author Information
| Name | Institution |
|---|---|
| Do-Kywn Kim | Kyungpook National University |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 204 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |