Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon

Type:
Journal
Info:
Energy Procedia 124 (2017) 799-805
Date:
2017-09-17
DOI:
https://doi.org/10.1016/j.egypro.2017.09.350

Author Information

Name Institution
Verena SteckenreiterInstitute for Solar Energy Research Hamelin (ISFH)
Dominic C. WalterInstitute for Solar Energy Research Hamelin (ISFH)
Jan SchmidtInstitute for Solar Energy Research Hamelin (ISFH)

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Silicon

Notes

1141