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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 106, 052104 (2015)
Date:
2015-01-23
Author Information
| Name | Institution |
|---|---|
| Boris Veith-Wolf | Institute for Solar Energy Research Hamelin (ISFH) |
| Jianhui Wang | Optitune International Pte. Ltd. |
| Milja Hannu-Kuure | Optitune International Pte. Ltd. |
| Ning Chen | Optitune International Pte. Ltd. |
| Admir Hadzic | Optitune International Pte. Ltd. |
| Paul Williams | Optitune International Pte. Ltd. |
| Jarkko Leivo | Optitune International Pte. Ltd. |
| Ari Karkkainen | Optitune International Pte. Ltd. |
| Jan Schmidt | Institute for Solar Energy Research Hamelin (ISFH) |
Films
Film/Plasma Properties
Substrates
| Silicon |
Keywords
| Passivation |
| Solar |
Notes
| PEALD A2O3 used for crystalline silicon solar cell passivation. |
| 320 |