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Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Texture of atomic layer deposited ruthenium
Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 106, 052104 (2015)
Date:
2015-01-23
Author Information
| Name | Institution |
|---|---|
| Boris Veith-Wolf | Institute for Solar Energy Research Hamelin (ISFH) |
| Jianhui Wang | Optitune International Pte. Ltd. |
| Milja Hannu-Kuure | Optitune International Pte. Ltd. |
| Ning Chen | Optitune International Pte. Ltd. |
| Admir Hadzic | Optitune International Pte. Ltd. |
| Paul Williams | Optitune International Pte. Ltd. |
| Jarkko Leivo | Optitune International Pte. Ltd. |
| Ari Karkkainen | Optitune International Pte. Ltd. |
| Jan Schmidt | Institute for Solar Energy Research Hamelin (ISFH) |
Films
Film/Plasma Properties
Substrates
| Silicon |
Keywords
| Passivation |
| Solar |
Notes
| PEALD A2O3 used for crystalline silicon solar cell passivation. |
| 320 |