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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 106, 052104 (2015)
Date:
2015-01-23
Author Information
| Name | Institution |
|---|---|
| Boris Veith-Wolf | Institute for Solar Energy Research Hamelin (ISFH) |
| Jianhui Wang | Optitune International Pte. Ltd. |
| Milja Hannu-Kuure | Optitune International Pte. Ltd. |
| Ning Chen | Optitune International Pte. Ltd. |
| Admir Hadzic | Optitune International Pte. Ltd. |
| Paul Williams | Optitune International Pte. Ltd. |
| Jarkko Leivo | Optitune International Pte. Ltd. |
| Ari Karkkainen | Optitune International Pte. Ltd. |
| Jan Schmidt | Institute for Solar Energy Research Hamelin (ISFH) |
Films
Film/Plasma Properties
Substrates
| Silicon |
Keywords
| Passivation |
| Solar |
Notes
| PEALD A2O3 used for crystalline silicon solar cell passivation. |
| 320 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |