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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
Type:
Journal
Info:
Sensors and Materials, Vol. 27, No. 7 (2015) 575--583
Date:
2015-06-15
Author Information
| Name | Institution |
|---|---|
| Hee Ho Lee | Kyungpook National University |
| Myunghan Bae | Kyungpook National University |
| Sung-Hyun Jo | Kyungpook National University |
| Jang-Kyoo Shin | Kyungpook National University |
| Dong Hyeok Son | Kyungpook National University |
| Chul-Ho Won | Kyungpook National University |
| Jung-Hee Lee | Kyungpook National University |
Films
Film/Plasma Properties
Substrates
| AlGaN |
Keywords
Notes
| 368 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |