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Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications

Type:
Conference Proceedings
Info:
2017 75th Annual Device Research Conference (DRC)
Date:
2017-06-25
DOI:
http://dx.doi.org/10.1109/DRC.2017.7999510

Author Information

Name Institution
Yoni MehlmanPrinceton University
Yasmin AfsarPrinceton University
Naveen YermaPrinceton University
Sigurd WagnerPrinceton University
James C. SturmPrinceton University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature = 200C

Plasma ZnO

Hardware used: Unknown
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Cr
Al2O3
ZnO

Notes

1136