Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
Type:
Conference Proceedings
Info:
2017 75th Annual Device Research Conference (DRC)
Date:
2017-06-25
Author Information
| Name | Institution |
|---|---|
| Yoni Mehlman | Princeton University |
| Yasmin Afsar | Princeton University |
| Naveen Yerma | Princeton University |
| Sigurd Wagner | Princeton University |
| James C. Sturm | Princeton University |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Cr |
| Al2O3 |
| ZnO |
Notes
| 1136 |