Publication Information

Title:
Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
Type:
Conference Proceedings
Info:
2017 75th Annual Device Research Conference (DRC)
Date:
2017-06-25

Author Information

Name Institution
Yoni MehlmanPrinceton University
Yasmin AfsarPrinceton University
Naveen YermaPrinceton University
Sigurd WagnerPrinceton University
James C. SturmPrinceton University

Films

Plasma Al2O3

Hardware used: Unknown


Plasma ZnO

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Cr
Al2O3
ZnO

Keywords

Notes

1136