Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
Type:
Conference Proceedings
Info:
2017 75th Annual Device Research Conference (DRC)
Date:
2017-06-25
Author Information
Name | Institution |
---|---|
Yoni Mehlman | Princeton University |
Yasmin Afsar | Princeton University |
Naveen Yerma | Princeton University |
Sigurd Wagner | Princeton University |
James C. Sturm | Princeton University |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
Cr |
Al2O3 |
ZnO |
Notes
1136 |