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HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition
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Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
Type:
Journal
Info:
Applied Physics Letters 107, 233302 (2015)
Date:
2015-11-26
Author Information
| Name | Institution |
|---|---|
| Alrun A. Günther | Technische Universität Dresden |
| Christoph Hossbach | Technische Universität Dresden |
| Michael Sawatzki | Technische Universität Dresden |
| Daniel Kasemann | CreaPhys GmbH |
| Johann W. Bartha | Technische Universität Dresden |
| Karl Leo | Technische Universität Dresden |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
Keywords
Notes
| 435 |