Publication Information

Title:
Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
Type:
Journal
Info:
Applied Physics Letters 107, 233302 (2015)
Date:
2015-11-26
DOI:
http://dx.doi.org/10.1063/1.4937439

Author Information

Name Institution
Alrun A. GüntherTechnische Universität Dresden
Christoph HossbachTechnische Universität Dresden
Michael SawatzkiTechnische Universität Dresden
Daniel KasemannCreaPhys GmbH
Johann W. BarthaTechnische Universität Dresden
Karl LeoTechnische Universität Dresden

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Substrates

Silicon

Keywords

Notes

435