Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation

Publication Information

Title: Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation

Type: Journal

Info: Applied Physics Letters 107, 233302 (2015)

Date: 2015-11-26

DOI: http://dx.doi.org/10.1063/1.4937439

Author Information

Name

Institution

Alrun A. Günther

Technische Universität Dresden

Christoph Hossbach

Technische Universität Dresden

Michael Sawatzki

Technische Universität Dresden

Daniel Kasemann

CreaPhys GmbH

Johann W. Bartha

Technische Universität Dresden

Technische Universität Dresden

Films

Plasma Al₂O₃ using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Transistor Characteristics

Transistor Characterization

HP 4145B Semiconductor Parameter Analyzer

Substrates

Silicon

Keywords

Notes

435

Shortcuts

Films

Deposition Hardware

Film and Plasma Characteristics

Multi-factor Search

ALD and PEALD Background

On-line PEALD Theses

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