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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 105, 222408 (2014)
Date:
2014-11-20
Author Information
| Name | Institution |
|---|---|
| Inga Anita Fischer | Universitat Stuttgart |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 213 |