Publication Information

Title:
Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
Type:
Conference Proceedings
Info:
2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Date:
2017-05-22

Author Information

Name Institution
Erlend RolsethUniversitat Stuttgart
Andreas BlechUniversitat Stuttgart
Inga Anita FischerUniversitat Stuttgart
Y. HashadUniversitat Stuttgart
R. KoernerUniversitat Stuttgart
K. KosteckiUniversitat Stuttgart
A. KruglovUniversitat Stuttgart
V. S. Senthil SrinivasanUniversitat Stuttgart
M. WeiserUniversitat Stuttgart
T. WendavHumboldt-Universität zu Berlin
Kurt BuschHumboldt-Universität zu Berlin
Jörg SchulzeUniversitat Stuttgart

Films

Plasma Al2O3

Hardware used: Unknown


Film/Plasma Properties

Substrates

Silicon
Ge
GeSn

Keywords

Gate Dielectric

Notes

1075