Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
Type:
Conference Proceedings
Info:
2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Date:
2017-05-22
Author Information
| Name | Institution |
|---|---|
| Erlend Rolseth | Universitat Stuttgart |
| Andreas Blech | Universitat Stuttgart |
| Inga Anita Fischer | Universitat Stuttgart |
| Y. Hashad | Universitat Stuttgart |
| R. Koerner | Universitat Stuttgart |
| K. Kostecki | Universitat Stuttgart |
| A. Kruglov | Universitat Stuttgart |
| V. S. Senthil Srinivasan | Universitat Stuttgart |
| M. Weiser | Universitat Stuttgart |
| T. Wendav | Humboldt-Universität zu Berlin |
| Kurt Busch | Humboldt-Universität zu Berlin |
| Jörg Schulze | Universitat Stuttgart |
Films
Film/Plasma Properties
Substrates
| Silicon |
| Ge |
| GeSn |
Notes
| 1075 |