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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
Type:
Journal
Info:
Organic Electronics, Volume 28, 2016, Pages 139 - 146
Date:
2015-10-23
Author Information
| Name | Institution |
|---|---|
| Yonghwa Baek | Pohang University of Science and Technology (POSTECH) |
| Sooman Lim | Sungkyunkwan University |
| Lae Ho Kim | Pohang University of Science and Technology (POSTECH) |
| Seonuk Park | Pohang University of Science and Technology (POSTECH) |
| Seung Woo Lee | Yeungnam University |
| Tae Hwan Oh | Yeungnam University |
| Se Hyun Kim | Yeungnam University |
| Chan Eon Park | Pohang University of Science and Technology (POSTECH) |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 417 |