Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors

Type:
Journal
Info:
Organic Electronics, Volume 28, 2016, Pages 139 - 146
Date:
2015-10-23
DOI:
http://dx.doi.org/10.1016/j.orgel.2015.10.025

Author Information

Name Institution
Yonghwa BaekPohang University of Science and Technology (POSTECH)
Sooman LimSungkyunkwan University
Lae Ho KimPohang University of Science and Technology (POSTECH)
Seonuk ParkPohang University of Science and Technology (POSTECH)
Seung Woo LeeYeungnam University
Tae Hwan OhYeungnam University
Se Hyun KimYeungnam University
Chan Eon ParkPohang University of Science and Technology (POSTECH)

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma TiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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