Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

Type:
Journal
Info:
Solid-State Electronics 100 (2014) 11-14
Date:
2014-05-24
DOI:
http://dx.doi.org/10.1016/j.sse.2014.05.007

Author Information

Name Institution
Do-Kywn KimKyungpook National University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature = 450C

Film/Plasma Properties

Substrates

Notes

219