Publication Information

Title: Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

Type: Journal

Info: Solid-State Electronics 100 (2014) 11-14

Date: 2014-05-24

DOI: http://dx.doi.org/10.1016/j.sse.2014.05.007

Author Information

Name

Institution

Kyungpook National University

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 450C

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

219



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