Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance

Type:
Journal
Info:
2016 J. Phys. D: Appl. Phys. 49 245105
Date:
2016-04-15
DOI:
https://doi.org/10.1088/0022-3727/49/24/245105

Author Information

Name Institution
Chun-Ti LuNational Taiwan University
Yu-Shiang HuangNational Taiwan University
Chee Wee LiuNational Taiwan University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma TiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Substrates

Silicon

Notes

825