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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Electronic Conduction Mechanisms in Insulators
Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:65, Issue:1, 2018
Date:
2017-11-18
Author Information
| Name | Institution |
|---|---|
| Tsung-Han Chiang | Oregon State University |
| John F. Wager | Oregon State University |
Films
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Keywords
Notes
| 1277 |