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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts

Type:
Journal
Info:
Nano Lett., 2014, 14 (8), pp 4511-4516
Date:
2014-06-30
DOI:
http://dx.doi.org/10.1021/nl5015316

Author Information

Name Institution
Joon Young KwakCornell University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Silicon

Notes

248