Publication Information

Title: High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Type: Journal

Info: J. Mater. Chem. C, 2016, 4, 6873-6880

Date: 2016-06-22

DOI: http://dx.doi.org/10.1039/C6TC00580B

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Plasma In2O3 using Unknown

Deposition Temperature Range = 100-250C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam alpha-SE

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Mobility

Hall Measurements

Accent HL5500

Resistivity, Sheet Resistance

Hall Measurements

Accent HL5500

Carrier Concentration

Hall Measurements

Accent HL5500

Transmittance

UV-VIS Spectroscopy

-

Transistor Characteristics

Transistor Characterization

-

Substrates

Si(100)

Al2O3

ITO

Keywords

TCO, Transparent Conducting Oxide

TFT, Thin Film Transistor

Notes

Used unknown "Genie" ALD system.

941



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