Publication Information

Title:
High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
Type:
Journal
Info:
J. Mater. Chem. C, 2016, 4, 6873-6880
Date:
2016-06-22

Author Information

Name Institution
Hye In YeomKorea Advanced Institute of Science and Technology
Jong Bum KoKorea Advanced Institute of Science and Technology
Gum Bi MunKorea Advanced Institute of Science and Technology
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Mobility
Analysis: Hall Measurements

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Si(100)
Al2O3
ITO

Keywords

TCO, Transparent Conducting Oxide
TFT, Thin Film Transistor

Notes

Used unknown "Genie" ALD system.
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