Publication Information

Title:
High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
Type:
Conference Proceedings
Info:
2015 SID Symposium Digest of Technical Papers, Paper No S12.2
Date:
2015-09-21

Author Information

Name Institution
Hye In YeomKorea Advanced Institute of Science and Technology
Jong Bum KoKorea Advanced Institute of Science and Technology
Chi Sun HwangElectronics and Telecommunication Research Institute, (ETRI)
Sung Haeng ChoElectronics and Telecommunication Research Institute, (ETRI)
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology

Films

Plasma In2O3

Hardware used: Unknown

CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

SiO2

Keywords

Notes

484