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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
Type:
Conference Proceedings
Info:
2015 SID Symposium Digest of Technical Papers, Paper No S12.2
Date:
2015-09-21
Author Information
| Name | Institution |
|---|---|
| Hye In Yeom | Korea Advanced Institute of Science and Technology |
| Jong Bum Ko | Korea Advanced Institute of Science and Technology |
| Chi Sun Hwang | Electronics and Telecommunication Research Institute, (ETRI) |
| Sung Haeng Cho | Electronics and Telecommunication Research Institute, (ETRI) |
| Sang-Hee Ko Park | Korea Advanced Institute of Science and Technology |
Films
Plasma In2O3
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
Notes
| 484 |