High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
Type:
Conference Proceedings
Info:
2015 SID Symposium Digest of Technical Papers, Paper No S12.2
Date:
2015-09-21
Author Information
| Name | Institution |
|---|---|
| Hye In Yeom | Korea Advanced Institute of Science and Technology |
| Jong Bum Ko | Korea Advanced Institute of Science and Technology |
| Chi Sun Hwang | Electronics and Telecommunication Research Institute, (ETRI) |
| Sung Haeng Cho | Electronics and Telecommunication Research Institute, (ETRI) |
| Sang-Hee Ko Park | Korea Advanced Institute of Science and Technology |
Films
Plasma In2O3
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| SiO2 |
Notes
| 484 |