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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface

Type:
Journal
Info:
J. Phys. Chem. Lett., 2015, 6 (10), pp 1935-1941
Date:
2015-05-07
DOI:
http://dx.doi.org/10.1021/acs.jpclett.5b00787

Author Information

Name Institution
David A. RackeUniversity of Arizona
Leah L. KellyUniversity of Arizona
Hyungchul (GaTech) KimGeorgia Institute of Technology
Philip SchulzNational Renewable Energy Laboratory
Ajaya K. SigdelNational Renewable Energy Laboratory
Joseph J. BerryNational Renewable Energy Laboratory
Samuel GrahamGeorgia Institute of Technology
Dennis NordlundStanford University
Oliver L. A. MontiUniversity of Arizona

Films

Plasma ZnO

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

453