Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A141 (2016)
Date:
2015-12-04
DOI:
http://dx.doi.org/10.1116/1.4938074

Author Information

Name Institution
Yu-Chang LinNational Cheng Kung University
Hsin-Ying LeeNational Cheng Kung University
Ching-Ting LeeNational Cheng Kung University

Films

Plasma MgxZn1-xO

Hardware used: Unknown
bis(cyclopentadienyl)Magnesium, MgCp2
CAS#: 1284-72-6
Where to buy precursor
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Transmittance
Analysis: -
Diagnostic: -

Characteristic: Optical Bandgap
Analysis: -
Diagnostic: -

Characteristic: Dark Current
Analysis: -
Diagnostic: -

Characteristic: Photocurrent
Analysis: -
Diagnostic: -

Substrates

Sapphire

Notes

449