Publication Information

Title: Oxygen migration in TiO2-based higher-k gate stacks

Type: Journal

Info: Journal of Applied Physics 107, 054102 (2010)

Date: 2009-12-29

DOI: http://dx.doi.org/10.1063/1.3298454

Author Information

Name

Institution

IBM

IBM

IBM

IBM

IBM

IBM

IBM

IBM

Films

Plasma TiO2 using Unknown

Deposition Temperature = 250C

546-68-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

-

Chemical Composition, Impurities

MEIS, Medium Energy Ion Scattering

-

Capacitance

C-V, Capacitance-Voltage Measurements

-

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Chemical Composition, Impurities

ELS, EELS, Electron Energy Loss Spectroscopy

-

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

-

Images

TEM, Transmission Electron Microscope

-

Interfacial Layer

TEM, Transmission Electron Microscope

-

Substrates

Si(100)

Keywords

Diffusion Barrier

Notes

726



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