Oxygen migration in TiO2-based higher-k gate stacks

Type:
Journal
Info:
Journal of Applied Physics 107, 054102 (2010)
Date:
2009-12-29

Author Information

Name Institution
Sang Bum KimIBM
Stephen L. BrownIBM
S. M. RossnagelIBM
John BruleyIBM
Matthew CopelIBM
Marco J. P. HopstakenIBM
Vijay NarayananIBM
Martin M. FrankIBM

Films

Plasma TiO2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: MEIS, Medium Energy Ion Scattering

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Notes

726