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Publication Information

Title: Oxygen migration in TiO2-based higher-k gate stacks

Type: Journal

Info: Journal of Applied Physics 107, 054102 (2010)

Date: 2009-12-29

DOI: http://dx.doi.org/10.1063/1.3298454

Author Information

Name

Institution

IBM

IBM

IBM

IBM

IBM

IBM

IBM

IBM

Films

Plasma TiO2 using Unknown

Deposition Temperature = 250C

546-68-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Unknown

Chemical Composition, Impurities

MEIS, Medium Energy Ion Scattering

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Chemical Composition, Impurities

ELS, EELS, Electron Energy Loss Spectroscopy

Unknown

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Substrates

Si(100)

Keywords

Diffusion Barrier

Notes

726


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