Publication Information

Title:
Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
Type:
Journal
Info:
Microelectronic Engineering 149 (2016) 62 - 65
Date:
2015-09-22

Author Information

Name Institution
Ji-Hoon AhnKorea Maritime and Ocean University
Ja-Yong KimHynix Semiconductor

Films

Thermal RuO2


Plasma SrO


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiO2
RuO2

Keywords

Notes

458