Publication Information

Title: Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

Type: Journal

Info: Microelectronic Engineering 149 (2016) 62 - 65

Date: 2015-09-22

DOI: http://dx.doi.org/10.1016/j.mee.2015.09.015

Author Information

Name

Institution

Korea Maritime and Ocean University

Hynix Semiconductor

Films

Thermal RuO2 using Unknown

Deposition Temperature = 230C

32992-96-4

7782-44-7

Plasma SrO using Unknown

Deposition Temperature = 225C

36830-74-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Hitachi S-4800 Field Emission Scanning Electron Microscope

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Seiko SPA-400

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Substrates

SiO2

RuO2

Keywords

Notes

458



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