Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

Type:
Journal
Info:
Microelectronic Engineering 149 (2016) 62 - 65
Date:
2015-09-22
DOI:
http://dx.doi.org/10.1016/j.mee.2015.09.015

Author Information

Name Institution
Ji-Hoon AhnKorea Maritime and Ocean University
Ja-Yong KimHynix Semiconductor

Films

Thermal RuO2

Hardware used: Unknown
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 230C

Plasma SrO

Hardware used: Unknown
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 225C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko SPA-400

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Substrates

SiO2
RuO2

Notes

458