Publication Information

Title: Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability

Type: Journal

Info: ECS J. Solid State Sci. Technol. 2018 volume 7, issue 2, N1-N6

Date: 2017-12-18

DOI: http://dx.doi.org/10.1149/2.0461712jss

Author Information

Name

Institution

New Jersey Institute of Technology

New Jersey Institute of Technology

Heritage Institute of Technology

New Jersey Institute of Technology

New Jersey Institute of Technology

Tokyo Electron America, Inc.

Tokyo Electron America, Inc.

Tokyo Electron America, Inc.

Tokyo Electron America, Inc.

Tokyo Electron America, Inc.

Films

Other HfZrO2 using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

-

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

-

Interface State Density

C-V, Capacitance-Voltage Measurements

-

Hysteresis

C-V, Capacitance-Voltage Measurements

-

Leakage Current

I-V, Current-Voltage Measurements

-

Substrates

Al2O3

Keywords

Notes

1124



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