Publication Information

Title:
Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2018 volume 7, issue 2, N1-N6
Date:
2017-12-18

Author Information

Name Institution
M. N. BhuyianNew Jersey Institute of Technology
P. ShaoNew Jersey Institute of Technology
A. SenguptaHeritage Institute of Technology
Y. DingNew Jersey Institute of Technology
D. MisraNew Jersey Institute of Technology
K. TapilyTokyo Electron America, Inc.
R. D. ClarkTokyo Electron America, Inc.
Steven ConsiglioTokyo Electron America, Inc.
C. S. WajdaTokyo Electron America, Inc.
G. J. LeusinkTokyo Electron America, Inc.

Films

Other HfZrO2

Hardware used: Unknown


Film/Plasma Properties

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Al2O3

Keywords

Notes

1124