Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
Type:
Journal
Info:
Semicond. Sci. Technol. 25 (2010) 045009
Date:
2010-02-23
Author Information
| Name | Institution |
|---|---|
| J. Hinz | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
| Anton J. Bauer | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
| T. Thiede | Ruhr-University Bochum |
| Roland A. Fischer | Ruhr-University Bochum |
| L. Frey | Fraunhofer Institute for Integrated Systems and Device Technology (IISB) |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: SNMS, Seconday Neutral Mass Spectrometry
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Work Function
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| SiO2 |
| HfO2 |
Notes
| Some samples RTP at 900C for 30s. |
| Plasma gas not mentioned. Might be in companion paper http://dx.doi.org/10.1088/0268-1242/25/7/075009. |
| 60 |