Publication Information

Title:
Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
Type:
Journal
Info:
Semicond. Sci. Technol. 25 (2010) 045009
Date:
2010-02-23

Author Information

Name Institution
J. HinzFraunhofer Institute for Integrated Systems and Device Technology (IISB)
Anton J. BauerFraunhofer Institute for Integrated Systems and Device Technology (IISB)
T. ThiedeRuhr-University Bochum
Roland A. FischerRuhr-University Bochum
L. FreyFraunhofer Institute for Integrated Systems and Device Technology (IISB)

Films

Plasma NbN

Hardware used: Unknown


CAS#: Unknown

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: SNMS, Seconday Neutral Mass Spectrometry

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Work Function
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

SiO2
HfO2

Keywords

Gate Metal

Notes

Some samples RTP at 900C for 30s.
Plasma gas not mentioned. Might be in companion paper http://dx.doi.org/10.1088/0268-1242/25/7/075009.
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