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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Study on the resistive switching time of TiO2 thin films
Type:
Journal
Info:
Applied Physics Letters 89, 012906 (2006)
Date:
2006-05-19
Author Information
| Name | Institution |
|---|---|
| Byung Joon Choi | Seoul National University |
| Seol Choi | Seoul National University |
| Kyung Min Kim | Seoul National University |
| Yong Cheol Shin | Seoul National University |
| Cheol Seong Hwang | Seoul National University |
| Sung-Yeon Hwang | Hynix Semiconductor |
| Sung-Sil Cho | Hynix Semiconductor |
| Sanghyun Park | Hynix Semiconductor |
| Suk Kyoung Hong | Hynix Semiconductor |
Films
Film/Plasma Properties
Characteristic: Resistive Switching
Analysis: Custom
Substrates
Keywords
| Resistance RAM |
| Resistive Switch |
Notes
| 1474 |