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Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
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Publication Information
Title:
Study on the resistive switching time of TiO2 thin films
Type:
Journal
Info:
Applied Physics Letters 89, 012906 (2006)
Date:
2006-05-19
Author Information
| Name | Institution |
|---|---|
| Byung Joon Choi | Seoul National University |
| Seol Choi | Seoul National University |
| Kyung Min Kim | Seoul National University |
| Yong Cheol Shin | Seoul National University |
| Cheol Seong Hwang | Seoul National University |
| Sung-Yeon Hwang | Hynix Semiconductor |
| Sung-Sil Cho | Hynix Semiconductor |
| Sanghyun Park | Hynix Semiconductor |
| Suk Kyoung Hong | Hynix Semiconductor |
Films
Film/Plasma Properties
Characteristic: Resistive Switching
Analysis: Custom
Substrates
Keywords
| Resistance RAM |
| Resistive Switch |
Notes
| 1474 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |