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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Study on the resistive switching time of TiO2 thin films

Type:
Journal
Info:
Applied Physics Letters 89, 012906 (2006)
Date:
2006-05-19
DOI:
http://dx.doi.org/10.1063/1.2219726

Author Information

Name Institution
Byung Joon ChoiSeoul National University
Seol ChoiSeoul National University
Kyung Min KimSeoul National University
Yong Cheol ShinSeoul National University
Cheol Seong HwangSeoul National University
Sung-Yeon HwangHynix Semiconductor
Sung-Sil ChoHynix Semiconductor
Sanghyun ParkHynix Semiconductor
Suk Kyoung HongHynix Semiconductor

Films

Plasma TiO2

Hardware used: Unknown
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Resistive Switching
Analysis: Custom
Diagnostic: Custom

Substrates

Notes

1474