Bipolar resistive switching in amorphous titanium oxide thin film

Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 4, Issue 1-2, pages 28--30, 2010
Date:
2009-11-23
DOI:
http://dx.doi.org/10.1002/pssr.200903383

Author Information

Name Institution
Hu Young JeongKorea Advanced Institute of Science and Technology
Jeong Yong LeeKorea Advanced Institute of Science and Technology
Min-Ki RyuElectronics and Telecommunication Research Institute, (ETRI)
Sung-Yool ChoiElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma TiO2

Hardware used: Unknown
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 180C

Film/Plasma Properties

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Substrates

Al

Notes

Available on archive.org at https://arxiv.org/pdf/0908.3525.pdf
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