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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings
Type:
Journal
Info:
OPTICAL MATERIALS EXPRESS, Vol. 5, No. 1, 1 Jan 2015.
Date:
2014-12-05
Author Information
| Name | Institution |
|---|---|
| Thomas Paul | Fraunhofer Institute for Applied Optics and Precision Engineering |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 212 |