Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion

Type:
Journal
Info:
IEEE Electron Device Letters (Volume:35, Issue: 12)
Date:
2014-10-14
DOI:
http://dx.doi.org/10.1109/LED.2014.2360926

Author Information

Name Institution
Yueh-Lin LeeNational Tsing Hua University

Films

Plasma Ga:ZnO

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

PEALD Ga-doped ZnO as TCO electrode.
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