Title: Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion
Type: Journal
Info: IEEE Electron Device Letters (Volume:35, Issue: 12)
Date: 2014-10-14
DOI: http://dx.doi.org/10.1109/LED.2014.2360926
Name
Institution
National Tsing Hua University
Characteristic
Analysis
Diagnostic
TCO, Transparent Conducting Oxide
Doping
PEALD Ga-doped ZnO as TCO electrode.
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