High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films

Type:
Conference Proceedings
Info:
228th ECS Meeting, October 11-15, 2015
Date:
2015-10-11
DOI:
https://ecs.confex.com/ecs/228/webprogram/Paper60722.html

Author Information

Name Institution
Jihwan AnStanford University
Fritz B. PrinzStanford University

Films

Other BaTiO3

Hardware used: Unknown
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Characteristic: Density
Analysis: -
Diagnostic: -

Substrates

Notes

485