Publication Information

Title:
Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 47, September 2005, pp. S292~S295
Date:
2005-02-05

Author Information

Name Institution
Sang-A LeePusan National University
Jae-Yeol HwangKorean Basic Science Institute
Jong-Pil KimKorean Basic Science Institute
Chae-Ryong ChoKorean Basic Science Institute
Won-Jae LeeDong-Eui University
Se-Young JeongPusan National University

Films

Plasma Ga2O3

Hardware used: Unknown

CAS#: Unknown

CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Interface State Density
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Flat Band Voltage
Analysis: C-F, Capacitance-Frequency Meaurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Keywords

Plasma-Enhanced Atomic Layer Deposition
Ga2O3
Gate Dielectric
Capacitance-Voltage
PEALD Film Development

Notes

18