Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Thin Solid Films 542 (2013) 38 - 44
Date:
2013-06-07
DOI:
http://dx.doi.org/10.1016/j.tsf.2013.06.010

Author Information

Name Institution
Chao ZhaoKing Abdullah University of Science and Technology
M.N. HedhiliKing Abdullah University of Science and Technology
Jingqi LiKing Abdullah University of Science and Technology
Qingxiao WangKing Abdullah University of Science and Technology
Yang YangKing Abdullah University of Science and Technology
Long ChenKing Abdullah University of Science and Technology
Liang LiKing Abdullah University of Science and Technology

Films

Plasma TiO2

Hardware used: Unknown
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Band Gap
Analysis: -
Diagnostic: -

Characteristic: Unknown
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Agilent 5500

Substrates

Silicon

Notes

610