Publication Information

Title: Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition

Type: Journal

Info: Microelectronic Engineering 147 (2015) 108 - 112

Date: 2015-04-12

DOI: http://dx.doi.org/10.1016/j.mee.2015.04.076

Author Information

Name

Institution

IMEC

IMEC

Micron Technology Belgium

University of Huddersfield

IMEC

IMEC

University of Huddersfield

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

Micron Technology Belgium

IMEC

IMEC

Films

Plasma Ru using Unknown

Deposition Temperature Range = 225-325C

0-0-0

7782-44-7

Plasma Ru using Unknown

Deposition Temperature Range = 225-325C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

-

Interfacial Layer

MEIS, Medium Energy Ion Scattering

-

Thickness

MEIS, Medium Energy Ion Scattering

-

Microstructure

MEIS, Medium Energy Ion Scattering

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Substrates

TiN

SrTiO3

Keywords

Metallic Thin Films

Notes

553



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