Publication Information

Title:
Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 108 - 112
Date:
2015-04-12

Author Information

Name Institution
Mihaela I. PopoviciIMEC
A. RedolfiIMEC
Marc AoulaicheMicron Technology Belgium
J. A. van den BergUniversity of Huddersfield
B. DouhardIMEC
J. SwertsIMEC
P. BaileyUniversity of Huddersfield
B. KaczerIMEC
Benjamin GrovenIMEC
Johan MeersschautIMEC
Thierry ConardIMEC
A. MoussaIMEC
Christoph AdelmannIMEC
Annelies DelabieIMEC
P. FazanMicron Technology Belgium
Sven Van ElshochtIMEC
M. JurczakIMEC

Films

Plasma Ru


Plasma Ru


Film/Plasma Properties

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Interfacial Layer
Analysis: MEIS, Medium Energy Ion Scattering

Characteristic: Thickness
Analysis: MEIS, Medium Energy Ion Scattering

Characteristic: Microstructure
Analysis: MEIS, Medium Energy Ion Scattering

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

TiN
SrTiO3

Keywords

Metallic Thin Films

Notes

553