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Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
Type:
Conference Proceedings
Info:
2008 IEEE International Interconnect Technology Conference
Date:
2008-06-01
Author Information
| Name | Institution |
|---|---|
| Daekyun Jeong | ASM Japan |
| Hiroaki Inoue | ASM Japan |
| Hiroshi Shinriki | ASM Japan |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Adhesion
Analysis: Bending Test, Four Point Bend Delamination Test
Substrates
| SiO2 |
| TaCN |
Notes
| No precursor information given. |
| 1441 |