Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling

Type:
Conference Proceedings
Info:
2008 IEEE International Interconnect Technology Conference
Date:
2008-06-01
DOI:
http://dx.doi.org/10.1109/IITC.2008.4546954

Author Information

Name Institution
Daekyun JeongASM Japan
Hiroaki InoueASM Japan
Hiroshi ShinrikiASM Japan

Films

Plasma RuTa

Hardware used: Unknown
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Adhesion
Analysis: Bending Test, Four Point Bend Delamination Test
Diagnostic: -

Substrates

SiO2
TaCN

Notes

No precursor information given.
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