Publication Information

Title:
Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
Type:
Journal
Info:
Journal of Crystal Growth 322 (2011) 33 - 37
Date:
2011-03-01

Author Information

Name Institution
Dai-Hong KimSeoul National University
Ji-Hwan KwonSeoul National University
Miyoung KimSeoul National University
Seong-Hyeon HongSeoul National University

Films

Plasma SnO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: X-ray Pole Figure

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Substrates

Sapphire

Keywords

Epitaxy

Notes

696