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Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD

Type:
Journal
Info:
Journal of Crystal Growth 322 (2011) 33 - 37
Date:
2011-03-01
DOI:
http://dx.doi.org/10.1016/j.jcrysgro.2011.03.004

Author Information

Name Institution
Dai-Hong KimSeoul National University
Ji-Hwan KwonSeoul National University
Miyoung KimSeoul National University
Seong-Hyeon HongSeoul National University

Films

Plasma SnO2

Hardware used: Unknown
DiButylTinDiAcetate, DBTDA, ((CH3CO2)2Sn[(CH2)3CH3]2)
CAS#: 1067-33-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Gaertner L2W15S830

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Axis

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: MAC Scientific Co., M18XHF

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: X-ray Pole Figure
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM-3000F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Substrates

Sapphire

Notes

696