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All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 060910 (2019)
Date:
2019-10-10
DOI:
http://dx.doi.org/10.1116/1.5119937

Author Information

Name Institution
Jeong-Mu LeeElectronics and Telecommunication Research Institute, (ETRI)
Hwan-Jae LeeElectronics and Telecommunication Research Institute, (ETRI)
Jae-Eun PiElectronics and Telecommunication Research Institute, (ETRI)
Jong-Heon YangElectronics and Telecommunication Research Institute, (ETRI)
Jeong Hun LeeElectronics and Telecommunication Research Institute, (ETRI)
Seong-Deok AhnElectronics and Telecommunication Research Institute, (ETRI)
Seung-Youl KangElectronics and Telecommunication Research Institute, (ETRI)
Jaehyun MoonElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma In2O3

Hardware used: Unknown
DADI, [Me2N(CH2)3]Me2In, (3-(dimethylamino)propyl)dimethylindium
CAS#: 120441-92-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma ZnO

Hardware used: Unknown
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Oxford EDAX

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer UV-Vis spectrometer

Characteristic: Band Gap
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: Kratos Axis Nova

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: -

Substrates

ITO
Al2O3

Notes

1462