Publication Information

Title:
All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 060910 (2019)
Date:
2019-10-10

Author Information

Name Institution
Jeong-Mu LeeElectronics and Telecommunication Research Institute, (ETRI)
Hwan-Jae LeeElectronics and Telecommunication Research Institute, (ETRI)
Jae-Eun PiElectronics and Telecommunication Research Institute, (ETRI)
Jong-Heon YangElectronics and Telecommunication Research Institute, (ETRI)
Jeong Hun LeeElectronics and Telecommunication Research Institute, (ETRI)
Seong-Deok AhnElectronics and Telecommunication Research Institute, (ETRI)
Seung-Youl KangElectronics and Telecommunication Research Institute, (ETRI)
Jaehyun MoonElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma In2O3


Plasma ZnO


Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Band Gap
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Substrates

ITO
Al2O3

Keywords

Notes

1462