All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 060910 (2019)
Date:
2019-10-10
Author Information
| Name | Institution |
|---|---|
| Jeong-Mu Lee | Electronics and Telecommunication Research Institute, (ETRI) |
| Hwan-Jae Lee | Electronics and Telecommunication Research Institute, (ETRI) |
| Jae-Eun Pi | Electronics and Telecommunication Research Institute, (ETRI) |
| Jong-Heon Yang | Electronics and Telecommunication Research Institute, (ETRI) |
| Jeong Hun Lee | Electronics and Telecommunication Research Institute, (ETRI) |
| Seong-Deok Ahn | Electronics and Telecommunication Research Institute, (ETRI) |
| Seung-Youl Kang | Electronics and Telecommunication Research Institute, (ETRI) |
| Jaehyun Moon | Electronics and Telecommunication Research Institute, (ETRI) |
Films
Film/Plasma Properties
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Band Gap
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Carrier Concentration
Analysis: Hall Measurements
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Substrates
| ITO |
| Al2O3 |
Notes
| 1462 |