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IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer

Type:
Journal
Info:
Journal of Nanoscience and Nanotechnology, Volume 14, Number 7, July 2014, pp. 5386-5389(4)
Date:
2014-07-01
DOI:
http://dx.doi.org/10.1166/jnn.2014.8708

Author Information

Name Institution
Deok-Kee KimSejong University

Films

Plasma IrO2

Hardware used: Unknown
(Ethyl Cyclopentadienyl) (CycloHexaDiene) Iridium, Ir(EtCp)(CHD)
CAS#: 721427-58-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Notes

PEALD IrO2 nanodot charge storage layer for memory device.
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