Growth of silica nanowires in vacuum

Type:
Journal
Info:
CrystEngComm, 2015, 17, 2406-2412
Date:
2015-02-04
DOI:
http://dx.doi.org/10.1039/C4CE02538E

Author Information

Name Institution
V. GurylevNational Tsing Hua University
C. C. WangFeng Chia University
Y. C. HsuehNational Tsing Hua University
T.-P. PerngNational Tsing Hua University

Films

Plasma Pt

Hardware used: Unknown
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Silicon

Keywords

Notes

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