In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 02D401 (2018)
Date:
2018-01-08
DOI:
http://dx.doi.org/10.1116/1.5015967

Author Information

Name Institution
Ganna ChistiakovaHelmholtz-Zentrum Berlin für Materialien und Energie GmbH
Mathias MewsHelmholtz-Zentrum Berlin für Materialien und Energie GmbH
Regan G. WilksHelmholtz-Zentrum Berlin für Materialien und Energie GmbH
Marcus BärHelmholtz-Zentrum Berlin für Materialien und Energie GmbH
Lars KorteHelmholtz-Zentrum Berlin für Materialien und Energie GmbH

Films

Plasma SnO2

Hardware used: Unknown
TDMASn, (Me2N)4Sn, [(CH3)2N]4Sn, Tetrakis(DiMethylAmido) Tin, Tin Dimethylamide
CAS#: 1066-77-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 90-210C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Band Gap
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Mercury Probe
Diagnostic: -

Substrates

Si-H
Corning XG Glass

Notes

1291