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265 Precursors and Plasma Gases
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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 102, 012113 (2013)
Date:
2012-12-20
Author Information
| Name | Institution |
|---|---|
| Jian Zhang | Zhejiang University |
| Hui Yang | Zhejiang University |
| Qi-long Zhang | Zhejiang University |
| Shurong Dong | Zhejiang University |
| J.K. Luo | Zhejiang University |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Substrates
| Pt |
Keywords
| Resistive Switch |
| Resistance RAM |
Notes
| 632 |