Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Publication Information

Title: Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Type: Journal

Info: Applied Physics Letters 102, 012113 (2013)

Date: 2012-12-20

DOI: http://dx.doi.org/10.1063/1.4774400

Author Information

Name

Institution

Zhejiang University

Zhejiang University

Zhejiang University

Zhejiang University

Zhejiang University

Films

Plasma ZnO using Unknown

Deposition Temperature = 150C

DEZ, DiEthyl Zinc, ZnEt₂, Zn(C₂H₅)₂

557-20-0

Where to buy precursor

O₂, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Resistive Switching

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Substrates

Keywords

Resistive Switch

Resistance RAM

Notes

632

Mark Sowa

Shortcuts

Films

Precursors

Deposition Hardware

Film and Plasma Characteristics

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