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Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 102, 012113 (2013)
Date:
2012-12-20
Author Information
| Name | Institution |
|---|---|
| Jian Zhang | Zhejiang University |
| Hui Yang | Zhejiang University |
| Qi-long Zhang | Zhejiang University |
| Shurong Dong | Zhejiang University |
| J.K. Luo | Zhejiang University |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Substrates
| Pt |
Keywords
| Resistive Switch |
| Resistance RAM |
Notes
| 632 |