Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 102, 012113 (2013)
Date:
2012-12-20
DOI:
http://dx.doi.org/10.1063/1.4774400

Author Information

Name Institution
Jian ZhangZhejiang University
Hui YangZhejiang University
Qi-long ZhangZhejiang University
Shurong DongZhejiang University
J.K. LuoZhejiang University

Films

Plasma ZnO

Hardware used: Unknown
DEZ, DiEthyl Zinc, ZnEt2, Zn(C2H5)2
CAS#: 557-20-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Substrates

Pt

Keywords

Resistive Switch
Resistance RAM

Notes

632