Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 102, 012113 (2013)
Date:
2012-12-20

Author Information

Name Institution
Jian ZhangZhejiang University
Hui YangZhejiang University
Qi-long ZhangZhejiang University
Shurong DongZhejiang University
J.K. LuoZhejiang University

Films

Plasma ZnO

Hardware used: Unknown


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Substrates

Pt

Notes

632