Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition

Type:
Journal
Info:
Journal of Power Sources, Volume 203, 1 April 2012, Pages 72-77.
Date:
2012-04-01
DOI:
http://dx.doi.org/10.1016/j.jpowsour.2011.12.020

Author Information

Name Institution
Merijn E. DondersEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Peter H. L. NottenEindhoven University of Technology

Films

Plasma CoOx

Hardware used: Unknown
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Density
Analysis: -
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: -
Diagnostic: -

Characteristic: Electrochemical Performance
Analysis: Charge/Discharge Cycling
Diagnostic: -

Characteristic: Electrochemical Performance
Analysis: CV, Cyclic Voltammetry
Diagnostic: -

Characteristic: Electrochemical Performance
Analysis: GITT, Galvanostatic Intermittent Titration Technique
Diagnostic: -

Characteristic: Electrochemical Performance
Analysis: EIS, Electrochemical Impedance Spectroscopy
Diagnostic: -

Substrates

TiN

Notes

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