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Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Crystal Growth 528 (2019) 125254
Date:
2019-09-24
DOI:
https://doi.org/10.1016/j.jcrysgro.2019.125254

Author Information

Name Institution
Joseph W. RobertsUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool
Boning DingUniversity of Cambridge
Rachel A. OliverUniversity of Cambridge
James T. GibbonUniversity of Liverpool
L.A.H. JonesUniversity of Liverpool
Vinod R. DhanakUniversity of Liverpool
Laurie J. PhillipsUniversity of Liverpool
J.D. MajorUniversity of Liverpool
Fabien C-P. MassabuauUniversity of Cambridge

Films

Plasma Ga2O3

Hardware used: Oxford Instruments OpAL
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 120-450C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon MM-16

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon MM-16

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Strain
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Microstructure
Analysis: Electron Diffraction
Diagnostic: FEI Technai F20

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: Shimadzu SolidSpec-3700

Characteristic: Reflectance Spectra
Analysis: UV-VIS Spectroscopy
Diagnostic: Shimadzu SolidSpec-3700

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy
Diagnostic: Shimadzu SolidSpec-3700

Substrates

Sapphire
Si(100)

Notes

1712