Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Crystal Growth 528 (2019) 125254
Date:
2019-09-24

Author Information

Name Institution
Joseph W. RobertsUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool
Boning DingUniversity of Cambridge
Rachel A. OliverUniversity of Cambridge
James T. GibbonUniversity of Liverpool
L.A.H. JonesUniversity of Liverpool
Vinod R. DhanakUniversity of Liverpool
Laurie J. PhillipsUniversity of Liverpool
J.D. MajorUniversity of Liverpool
Fabien C-P. MassabuauUniversity of Cambridge

Films

Plasma Ga2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Strain
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Microstructure
Analysis: Electron Diffraction

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Reflectance Spectra
Analysis: UV-VIS Spectroscopy

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy

Substrates

Sapphire
Si(100)

Notes

1712