Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Crystal Growth 528 (2019) 125254
Date:
2019-09-24
Author Information
Name | Institution |
---|---|
Joseph W. Roberts | University of Liverpool |
Paul R. Chalker | University of Liverpool |
Boning Ding | University of Cambridge |
Rachel A. Oliver | University of Cambridge |
James T. Gibbon | University of Liverpool |
L.A.H. Jones | University of Liverpool |
Vinod R. Dhanak | University of Liverpool |
Laurie J. Phillips | University of Liverpool |
J.D. Major | University of Liverpool |
Fabien C-P. Massabuau | University of Cambridge |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Strain
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Microstructure
Analysis: Electron Diffraction
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Reflectance Spectra
Analysis: UV-VIS Spectroscopy
Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy
Substrates
Sapphire |
Si(100) |
Notes
1712 |