Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

Type:
Journal
Info:
Chem. Mater. 2018, 30, 663-670
Date:
2017-11-30
DOI:
http://dx.doi.org/10.1021/acs.chemmater.7b03818

Author Information

Name Institution
Joseph A. SinghStanford University
Nick F. W. ThissenEindhoven University of Technology
Woo-Hee KimChonbuk National University
Hannah JohnsonToyota Motor Europe NV/SA
Erwin (W.M.M.) KesselsEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology
Stacey F. BentStanford University
Adriaan J. M. MackusEindhoven University of Technology

Films

Plasma Pt

Hardware used: Custom Remote Inductively Coupled Plasma
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Fe2O3

Hardware used: Custom Remote Inductively Coupled Plasma
t-Butylferrocene, (TBF), (t-BuCp)2Fe
CAS#: 1316-98-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe III

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL JEM ARM 200

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Substrates

SiO2

Notes

1064