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Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

Type:
Journal
Info:
Surface & Coatings Technology 326 (2017) 281 - 290
Date:
2017-07-23
DOI:
https://doi.org/10.1016/j.surfcoat.2017.07.056

Author Information

Name Institution
Mari NapariUniversity of Jyväskylä
Manu LahtinenUniversity of Jyväskylä
Alexey VeselovPicosun Oy
Jaakko JulinUniversity of Jyväskylä
Erik ØstrengPicosun Oy
Timo SajavaaraUniversity of Jyväskylä

Films

Plasma ZnO

Hardware used: Picosun R200
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Plasma ZnO

Hardware used: Beneq TFS-200
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL III

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ATR-FTIR
Diagnostic: Bruker Alpha Platinum

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics USB 2000

Substrates

Si(100)
Polycarbonate
PMMA, poly(methyl methacrylate)

Notes

Beneq plasma run in both direct and remote mode.
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