Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma

Type:
Conference Proceedings
Info:
2015 China Semiconductor Technology International Conference (CSTIC) talk
Date:
2015-03-15
DOI:
http://dx.doi.org/10.1109/CSTIC.2015.7153392

Author Information

Name Institution
Hao-Xiang ZhangHangzhou Silan Azure Co. Ltd.
Chun Min ZhangFudan University
Peng Fei WangFudan University

Films

Plasma RuO2

Hardware used: Beneq TFS-200
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM200-FEG

Substrates

SiO2

Notes

530