Publication Information

Title: Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma

Type: Conference Proceedings

Info: 2015 China Semiconductor Technology International Conference (CSTIC) talk

Date: 2015-03-15

DOI: http://dx.doi.org/10.1109/CSTIC.2015.7153392

Author Information

Name

Institution

Hangzhou Silan Azure Co. Ltd.

Fudan University

Fudan University

Films

Plasma RuO2 using Beneq TFS-200

Deposition Temperature = 250C

32992-96-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Thickness

TEM, Transmission Electron Microscope

Philips CM200-FEG

Substrates

SiO2

Keywords

Notes

530



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