Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200°C
Type:
Journal
Info:
2020 J. Phys. D: Appl. Phys. 53 165103
Date:
2020-01-22
Author Information
| Name | Institution |
|---|---|
| Dianne C. Corsino | Nara Institute of Science and Technology |
| Juan Paolo S. Bermundo | Nara Institute of Science and Technology |
| Mami N. Fujii | Nara Institute of Science and Technology |
| Kiyoshi Takahashi | Nippon Aluminum Alkyls, Ltd. |
| Yasuaki Ishikawa | Nara Institute of Science and Technology |
| Yukiharu Uraoka | Nara Institute of Science and Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Substrates
| IGZO |
Notes
| 1727 |