Publication Information

Title:
Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 9, 15-21
Date:
2014-10-06

Author Information

Name Institution
Gu Young ChoSeoul National University

Films

Plasma Y2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

High-k Dielectric Thin Films
PEALD Film Development

Notes

PEALD development of Y2O3 film.
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