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Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition

Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 9, 15-21
Date:
2014-10-06
DOI:
http://dx.doi.org/10.1149/06409.0015ecst

Author Information

Name Institution
Gu Young ChoSeoul National University

Films

Plasma Y2O3

Hardware used: CN1 Atomic Premium
Tris(methylcyclopentadienyl)yttrium(III), (MeCp)3Y
CAS#: 329735-72-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 175-325C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Substrates

Si(100)

Notes

PEALD development of Y2O3 film.
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